US Patent Issued to ROBERT BOSCH on March 3 for "Power semiconductor device and method for detecting aging-related damage to a power semiconductor device" (German Inventors)

ALEXANDRIA, Va., March 3 -- United States Patent no. 12,566,156, issued on March 3, was assigned to ROBERT BOSCH GMBH (Stuttgart, Germany).

"Power semiconductor device and method for detecting aging-related damage to a power semiconductor device" was invented by Karl Oberdieck (Neckartenzlingen, Germany) and Manuel Riefer (Reutlingen, Germany).

According to the abstract* released by the U.S. Patent & Trademark Office: "A power semiconductor device. The power semiconductor device includes a heat sink and three half-bridge modules, which are each arranged on the heat sink by way of a connecting region. The power semiconductor device includes at least one ultrasonic sensor and at least one MEMS sensor, wherein the at least one ultrasonic sen...