US Patent Issued to Robert Bosch on March 24 for "Deformation compensation method for growing thick galium nitride on silicon substrate" (German, American Inventors)

ALEXANDRIA, Va., March 24 -- United States Patent no. 12,584,242, issued on March 24, was assigned to Robert Bosch GmbH (Germany).

"Deformation compensation method for growing thick galium nitride on silicon substrate" was invented by Bo Cheng (Malden, Mass.), Mordechai Kornbluth (Brighton, Mass.), Charles Tuffile (Swansea, Mass.), Jens Baringhaus (Sindelfingen, Germany) and Christian Huber (Ludwigsburg, Germany).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of manufacturing a structure for power electronics which includes epitaxially growing a GaN semiconductor layer is provided. The method includes growing buffer layers formed of AlN and AlxGa(1-x)N, wherein 0greater thanxgreater than1, on a Si su...