ALEXANDRIA, Va., May 12 -- United States Patent no. 12,627,277, issued on May 12, was assigned to RF360 Singapore Pte. Ltd. (Republic Plaza, Singapore).
"Thin-film surface-acoustic-wave resonator with aluminum nitride layer" was invented by Ulrike Monika Roesler (Hebertshausen, Germany).
According to the abstract* released by the U.S. Patent & Trademark Office: "An apparatus is disclosed for a surface-acoustic-wave device having an Aluminum Nitride substrate layer. In one aspect, a surface acoustic wave (SAW) includes a substrate layer comprising an Aluminum Nitride (AlN) substrate layer, an electrode structure comprising an interdigital transducer, and a piezoelectric layer disposed between the electrode structure and the substrate layer...