ALEXANDRIA, Va., March 31 -- United States Patent no. 12,590,385, issued on March 31, was assigned to Resonac Corp. (Tokyo).
"SiC epitaxial wafer" was invented by Yoshikazu Umeta (Tokyo) and Marie Ohuchi (Tokyo).
According to the abstract* released by the U.S. Patent & Trademark Office: "An objective of the present invention is to provide a SiC epitaxial wafer with a large diameter, a thin thickness, and high carrier concentration uniformity. A SiC epitaxial wafer includes a SiC substrate and a SiC epitaxial layer. The SiC substrate has a diameter of 195 mm or more and a thickness of 460 micro metre or less. The SiC epitaxial layer has a carrier concentration variation of 20% or less."
The patent was filed on Nov. 6, 2024, under Applicat...