ALEXANDRIA, Va., March 24 -- United States Patent no. 12,584,243, issued on March 24, was assigned to Resonac Corp. (Tokyo).
"SiC epitaxial wafer" was invented by Yoshikazu Umeta (Tokyo).
According to the abstract* released by the U.S. Patent & Trademark Office: "An objective of the present invention is to provide a SiC epitaxial wafer with a large diameter, a thin thickness, and few triangular defects. A SiC epitaxial wafer includes a SiC substrate and a SiC epitaxial layer. The SiC substrate has a diameter of 195 mm or more and a thickness of 460 micro metre or less. The SiC epitaxial layer has a triangular defect density of 0.2 pieces/cm2 or less."
The patent was filed on Nov. 6, 2024, under Application No. 18/938,549.
*For further i...