US Patent Issued to Resonac on July 14 for "Etching gas, etching method, and method for producing semiconductor device" (Japanese Inventor)

ALEXANDRIA, Va., July 14 -- United States Patent no. 12,685,051, issued on July 14, was assigned to Resonac Corp. (Tokyo).

"Etching gas, etching method, and method for producing semiconductor device" was invented by Atsushi Suzuki (Tokyo).

According to the abstract* released by the U.S. Patent & Trademark Office: "An etching gas and an etching method capable of selectively etching an etching object containing silicon as compared with a non-etching object. The etching gas contains fluorobutene represented by a general formula C4HxFy, in which x is 1 or more and 7 or less, y is 1 or more and 7 or less, and x+y is 8. The etching gas contains or does not contain at least one of alkali metals and alkaline earth metals as metal impurities, and ...