US Patent Issued to Resonac on Jan. 13 for "Metal removal method, dry etching method, and production method for semiconductor element" (Japanese Inventor)

ALEXANDRIA, Va., Jan. 13 -- United States Patent no. 12,522,930, issued on Jan. 13, was assigned to Resonac Corp. (Tokyo).

"Metal removal method, dry etching method, and production method for semiconductor element" was invented by Kazuma Matsui (Tokyo).

According to the abstract* released by the U.S. Patent & Trademark Office: "A metal removal method which includes: a reaction step of bringing a treatment gas containing a fluorine-containing interhalogen compound and a metal-containing material containing a metal element into contact with each other to generate metal fluoride which is a reaction product of the fluorine-containing interhalogen compound and the metal element; and a volatilization step of heating the metal fluoride under an ...