ALEXANDRIA, Va., Feb. 3 -- United States Patent no. 12,540,419, issued on Feb. 3, was assigned to Resonac Corp. (Tokyo).
"SiC epitaxial wafer" was invented by Hiromasa Suo (Tokyo), Rimpei Kindaichi (Tokyo) and Tamotsu Yamashita (Tokyo).
According to the abstract* released by the U.S. Patent & Trademark Office: "A SiC epitaxial wafer including: a SiC substrate; and a SiC epitaxial layer stacked on one surface of the SiC substrate, wherein a diameter of the SiC substrate is 195 mm or more, and a warp is 50 micro metre or less."
The patent was filed on Dec. 19, 2024, under Application No. 18/987,002.
*For further information, including images, charts and tables, please visit: http://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO2&Sect2=HITOF...