ALEXANDRIA, Va., Sept. 10 -- United States Patent no. 12,412,832, issued on Sept. 9, was assigned to RENESAS ELECTRONICS Corp. (Tokyo).
"Semiconductor device" was invented by Nobuhito Shiraishi (Tokyo), Yasuo Morimoto (Tokyo) and Yoshihiro Funato (Tokyo).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a plurality of resistive films arranged on an interlayer dielectric film. Each of the plurality of resistive films extends in a first direction in plan view. The plurality of resistive films are arranged spaced apart in a second direction orthogonal to the first direction in plan view. The plurality of resistive films are divided into a first group, a second group, and a third grou...