US Patent Issued to Renesas Electronics on Sept. 1 for "Method of manufacturing semiconductor device" (Japanese Inventors)

ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,183, issued on Sept. 1, was assigned to Renesas Electronics Corp. (Tokyo).

"Method of manufacturing semiconductor device" was invented by Tadashi Yamaguchi (Tokyo) and Yoshiki Maruyama (Tokyo).

According to the abstract* released by the U.S. Patent & Trademark Office: "It is related to improving a performance of a semiconductor device and suppressing yield deterioration. Using a resist pattern as a mask, an ion-implantation is performed from an upper surface of a semiconductor substrate to form an ion-implanted layer in the semiconductor substrate. By subsequently, another ion-implantation is performed. Then, another ion-implanted layer is formed in the semiconductor substrate so...