ALEXANDRIA, Va., Oct. 21 -- United States Patent no. 12,446,242, issued on Oct. 14, was assigned to RENESAS ELECTRONICS Corp. (Tokyo).
"Semiconductor device and method of manufacturing the same" was invented by Zhichao Lin (Tokyo), Koji Ogata (Tokyo), Yukio Takahashi (Tokyo), Tomohiro Imai (Tokyo) and Tetsuya Yoshida (Tokyo).
According to the abstract* released by the U.S. Patent & Trademark Office: "A gate electrode is formed inside a trench via a gate insulating film. The gate insulating film formed on a semiconductor substrate is removed. An insulating film is formed on the semiconductor substrate. A p-type base region is formed in the semiconductor substrate. An n-type emitter region is formed in the base region. Hydrogen annealing pr...