US Patent Issued to Renesas Electronics on March 31 for "Method of manufacturing semiconductor device" (Japanese Inventors)

ALEXANDRIA, Va., March 31 -- United States Patent no. 12,593,455, issued on March 31, was assigned to Renesas Electronics Corp. (Tokyo).

"Method of manufacturing semiconductor device" was invented by Ryo Ogura (Tokyo) and Takahiro Maruyama (Tokyo).

According to the abstract* released by the U.S. Patent & Trademark Office: "This is a manufacturing method of a semiconductor device having a first region, a second region, and a third region. A second gate dielectric film is formed on a semiconductor substrate in the second region. A thin first gate dielectric film is formed on the semiconductor substrate in the first region. A protective film is formed on the first gate dielectric film and on the second gate dielectric film. A thin paraelectr...