US Patent Issued to RENESAS ELECTRONICS on March 17 for "Semiconductor device including impurity regions and element isolation portion and method of manufacturing the same" (Japanese Inventors)

ALEXANDRIA, Va., March 17 -- United States Patent no. 12,581,722, issued on March 17, was assigned to RENESAS ELECTRONICS Corp. (Tokyo).

"Semiconductor device including impurity regions and element isolation portion and method of manufacturing the same" was invented by Yudai Higa (Tokyo), Atsushi Sakai (Tokyo) and Yotaro Goto (Tokyo).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a cell region in which MISFETs are formed, and a peripheral region surrounding the cell region in plan view. In the cell region and the peripheral region, an n-type impurity region is formed in a semiconductor substrate. In the semiconductor substrate, an element isolation portion, a p-type impurity re...