US Patent Issued to Renesas Electronics on June 9 for "IGBT with shared emitter contact" (Japanese Inventor)

ALEXANDRIA, Va., June 9 -- United States Patent no. 12,652,848, issued on June 9, was assigned to Renesas Electronics Corp. (Tokyo).

"IGBT with shared emitter contact" was invented by Kouichi Konishi (Tokyo).

According to the abstract* released by the U.S. Patent & Trademark Office: "A source diffusion layer and a base diffusion layer are formed in regions of a semiconductor substrate located between a trench gate electrode and a trench emitter electrode that are spaced apart from each other. The trench emitter electrode, the base diffusion layer, and an insulating film have a recess that recede from a first main surface toward a second main surface. A shared contact member protrudes from the first main surface toward the second main surf...