US Patent Issued to RENESAS ELECTRONICS on Jan. 27 for "Semiconductor device and temperature characteristic test method thereof" (Japanese Inventors)

ALEXANDRIA, Va., Jan. 28 -- United States Patent no. 12,535,367, issued on Jan. 27, was assigned to RENESAS ELECTRONICS Corp. (Tokyo).

"Semiconductor device and temperature characteristic test method thereof" was invented by Tadashi Kameyama (Tokyo), Fumiki Kawakami (Tokyo), Tetsuhiro Koyama (Tokyo) and Masataka Minami (Tokyo).

According to the abstract* released by the U.S. Patent & Trademark Office: "Before a temperature characteristic of a band gap reference circuit is tested, temperature dependencies of a reference voltage and an absolute temperature proportional voltage for a plurality of samples are measured. When the temperature characteristic is tested, based on a difference triangleVref between the reference voltage of the band g...