US Patent Issued to RENESAS ELECTRONICS on Jan. 20 for "Semiconductor device having ferroelectric memory cells and method of manufacturing the same" (Japanese Inventors)

ALEXANDRIA, Va., Jan. 20 -- United States Patent no. 12,532,479, issued on Jan. 20, was assigned to RENESAS ELECTRONICS Corp. (Tokyo).

"Semiconductor device having ferroelectric memory cells and method of manufacturing the same" was invented by Kazuyuki Omori (Tokyo) and Tadashi Yamaguchi (Tokyo).

According to the abstract* released by the U.S. Patent & Trademark Office: "A ferroelectric memory cell includes a paraelectric film formed on a semiconductor substrate and a ferroelectric layer formed on the paraelectric film. The ferroelectric layer includes ferroelectric films and a plurality of grains. The ferroelectric films are made of a material containing a metal oxide and a first element. The plurality of grains are made of a material d...