ALEXANDRIA, Va., Dec. 23 -- United States Patent no. 12,506,016, issued on Dec. 23, was assigned to RENESAS ELECTRONICS Corp. (Tokyo).
"Method of manufacturing semiconductor device using different types of plating films" was invented by Toshiyuki Hata (Tokyo).
According to the abstract* released by the U.S. Patent & Trademark Office: "In a frame member including a first region and a second region that are extending in a first direction in parallel to each other while being spaced apart from each other, first and second plating films are formed in the first and second regions, respectively. The second plating film is different in a type from the first plating film. Then, a stamping process is performed to the frame member including the fir...