US Patent Issued to RENESAS ELECTRONICS on Aug. 26 for "Semiconductor device and method of manufacturing the same" (Japanese Inventors)

ALEXANDRIA, Va., Aug. 26 -- United States Patent no. 12,402,368, issued on Aug. 26, was assigned to RENESAS ELECTRONICS Corp. (Tokyo).

"Semiconductor device and method of manufacturing the same" was invented by Yuta Nabuchi (Tokyo), Katsumi Eikyu (Tokyo), Atsushi Sakai (Tokyo), Akihiro Shimomura (Tokyo) and Satoru Tokuda (Tokyo).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a cell region in which a plurality of unit cells are formed, and an outer peripheral region surrounding the cell region in plan view. Each of the plurality of unit cells includes a semiconductor substrate having a drift region, a body region, a source region, a pair of first column regions, and a gate elect...