ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,720,783, issued on Aug. 25, was assigned to Renesas Electronics Corp. (Tokyo).
"Semiconductor device and method of manufacturing the same" was invented by Naoki Takizawa (Tokyo).
According to the abstract* released by the U.S. Patent & Trademark Office: "Two resistance elements are each formed so as to overlap a portion of each of a gate pad and a gate wiring in a plan view, and are electrically connected to the gate pad and the gate wiring. A p-type well region is formed so as to overlap a portion of each of the two insulating films, the two resistance elements, the gate pad, the gate wiring, and the emitter electrode in the plan view. The emitter electrode includes a convex portion...