US Patent Issued to Renesas Electronics on Aug. 11 for "Programmable gate voltage for on resistance control of power module" (Japanese Inventor)

ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,706,603, issued on Aug. 11, was assigned to Renesas Electronics Corp. (Tokyo).

"Programmable gate voltage for on resistance control of power module" was invented by Takashi Fujita (Tokyo).

According to the abstract* released by the U.S. Patent & Trademark Office: "Semiconductor devices, systems and methods are described. A semiconductor device can include a driver configured to output a gate current to drive a power module. The semiconductor device can further include a buffer configured to buffer a reference voltage that is less than a supply voltage being provided to the driver. The semiconductor device can further include a controller configured to determine a gate voltage of the ...