US Patent Issued to Renesas Electronics on April 7 for "Semiconductor device and method for driving the same" (Japanese Inventors)

ALEXANDRIA, Va., April 7 -- United States Patent no. 12,597,918, issued on April 7, was assigned to Renesas Electronics Corp. (Tokyo).

"Semiconductor device and method for driving the same" was invented by Noboru Inomata (Tokyo) and Hideyuki Tajima (Tokyo).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device that outputs a high-speed and large-current pulse is provided. The semiconductor device includes: a first N channel transistor having its gate receiving a second voltage as its input; a first resistance element having its second terminal connected to a drain of the first N channel transistor; a second resistance element having its first terminal connected to a source of the first N channe...