ALEXANDRIA, Va., Jan. 28 -- United States Patent no. 12,538,500, issued on Jan. 27, was assigned to Realtek Semiconductor Corp. (Hsinchu, Taiwan).
"Inductor device" was invented by Hsiao-Tsung Yen (Hsinchu, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "An inductor device includes a pattern ground shield (PGS) structure, a first trace, a second trace, and a first center-tapped element. The first trace is disposed above the pattern ground shield structure, and located in a first area. The second trace is disposed above the pattern ground shield structure, and located in a second area. The first area is adjacent to the second area. The first center-tapped element is disposed above the first trace or bel...