US Patent Issued to QUANZHOU SANAN SEMICONDUCTOR TECHNOLOGY on June 3 for "Light emitting diode device, method for manufacturing the same and a display including the same" (Chinese Inventors)

ALEXANDRIA, Va., June 4 -- United States Patent no. 12,322,747, issued on June 3, was assigned to QUANZHOU SANAN SEMICONDUCTOR TECHNOLOGY Co. LTD. (Nanan, China).

"Light emitting diode device, method for manufacturing the same and a display including the same" was invented by Xinglong Li (Xiamen, China), Chen-Ke Hsu (Xiamen, China), Junpeng Shi (Xiamen, China) and Weng-Tack Wong (Xiamen, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A light emitting diode (LED) device includes at least three LED chips spaced apart from one another, an encapsulation layer and a lens. Each of the LED chips is configured to emit light having a respective one of wavelengths. The LED chips cooperate to have a light emittin...