ALEXANDRIA, Va., April 7 -- United States Patent no. 12,598,840, issued on April 7, was assigned to QUANZHOU SANAN SEMICONDUCTOR TECHNOLOGY Co. LTD. (Nanan City, China).
"Light-emitting diode" was invented by Yanbin Feng (Fujian, China), Wenhao Gao (Fujian, China), Qian Liang (Fujian, China) and Chaoyu Wu (Fujian, China).
According to the abstract* released by the U.S. Patent & Trademark Office: "A light-emitting diode includes a semiconductor epitaxial structure that has a first current spreading layer, a first transition layer, a first cladding layer, a second transition layer, a first confinement layer, an active layer, a second confinement layer, a second cladding layer, and a second current spreading layer. The first current spreadin...