US Patent Issued to QUANZHOU SAN'AN SEMICONDUCTOR TECHNOLOGY on Dec. 23 for "Laser diode and method for manufacturing the same" (Chinese Inventors)

ALEXANDRIA, Va., Dec. 23 -- United States Patent no. 12,506,324, issued on Dec. 23, was assigned to QUANZHOU SAN'AN SEMICONDUCTOR TECHNOLOGY Co. LTD. (Nanan, China).

"Laser diode and method for manufacturing the same" was invented by Zhibai Zhong (Xiamen, China), Tao Ye (Xiamen, China), Min Zhang (Xiamen, China), Shao-Hua Huang (Xiamen, China) and Shuiqing Li (Xiamen, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A laser diode includes a substrate, an epitaxial structure, an electrode contacting layer and an optical cladding layer. The epitaxial structure is disposed on the substrate, and is formed with a ridge structure opposite to the substrate. The electrode contacting layer is disposed on a top su...