US Patent Issued to QUALCOMM on Sept. 9 for "Monolithic three-dimensional (3D) complementary field effect transistor (CFET) circuits and method of manufacture" (California Inventors)

ALEXANDRIA, Va., Sept. 10 -- United States Patent no. 12,414,381, issued on Sept. 9, was assigned to QUALCOMM Inc. (San Diego).

"Monolithic three-dimensional (3D) complementary field effect transistor (CFET) circuits and method of manufacture" was invented by Xia Li (San Diego) and Bin Yang (San Diego).

According to the abstract* released by the U.S. Patent & Trademark Office: "A monolithic 3D complementary field-effect transistor (FET) (CFET) circuit includes a first CFET structure and a second CFET structure in a logic circuit within a device layer. A first interconnect layer disposed on the device layer provides first and second input contacts and an output contact of a logic circuit. Each CFET structure includes an upper FET having a ...