US Patent Issued to QUALCOMM on May 12 for "Voltage booster including circuitry to reduce overvoltage stress on discharge protection device" (California Inventors)

ALEXANDRIA, Va., May 12 -- United States Patent no. 12,627,229, issued on May 12, was assigned to QUALCOMM Inc. (San Diego).

"Voltage booster including circuitry to reduce overvoltage stress on discharge protection device" was invented by Xiaopeng Zhong (San Diego) and Dinesh Jagannath Alladi (San Diego).

According to the abstract* released by the U.S. Patent & Trademark Office: "An apparatus including: a boost voltage generator configured to generate a boost voltage at an output; a first field effect transistor (FET) including a drain/source terminal coupled to the output of the boost voltage generator; a discharging circuit coupled to a source/drain terminal of the first FET, wherein the discharging circuit is configured to discharge th...