US Patent Issued to QUALCOMM on May 12 for "Gate-all-around (GAA) field-effect transistor (FET) device having FETs with different crystalline orientation channels through a substrate" (North Carolina, California Inventors)

ALEXANDRIA, Va., May 12 -- United States Patent no. 12,628,377, issued on May 12, was assigned to QUALCOMM Inc. (San Diego).

"Gate-all-around (GAA) field-effect transistor (FET) device having FETs with different crystalline orientation channels through a substrate" was invented by Shreesh Narasimha (Charlotte, N.C.), Yan Sun (San Diego) and Peijie Feng (San Diego).

According to the abstract* released by the U.S. Patent & Trademark Office: "A gate-all-around (GAA) field effect transistor (FET) device, and related fabrication methods are disclosed. The GAA FET device includes P-type semiconductor PFET(s) and N-type semiconductor NFET(s) having channels with different crystalline orientation through a substrate. The GAA PFET(s) includes a ch...