ALEXANDRIA, Va., March 17 -- United States Patent no. 12,581,692, issued on March 17, was assigned to QUALCOMM Inc. (San Diego).
"Transistor devices with double-side contacts" was invented by Qingqing Liang (San Diego), Haining Yang (San Diego), Jonghae Kim (San Diego), Periannan Chidambaram (San Diego) and George Pete Imthurn (San Diego).
According to the abstract* released by the U.S. Patent & Trademark Office: "Disclosed are apparatuses including transistor and methods for fabricating the same. The transistor may include a drain substantially enclosed in a drain silicide layer, wherein an integral drain via portion of the drain silicide layer is coupled to a second drain contact and wherein a first drain via couples the drain silicide ...