ALEXANDRIA, Va., Jan. 20 -- United States Patent no. 12,531,095, issued on Jan. 20, was assigned to QUALCOMM Inc. (San Diego).
"Memory with redundant read optimization" was invented by Asheesh Singh Baghel (Bangalore, India), Amit Duggal (Bangalore, India) and Sateeshkumar Injarapu (Bangalore, India).
According to the abstract* released by the U.S. Patent & Trademark Office: "A memory is provided with a redundant read logic circuit that detects whether a current read operation should proceed as a redundant or non-redundant read operation. In a redundant read operation, the memory does not assert a word line voltage nor does it enable any sense amplifiers. The data for a redundant read operation is thus not provided by the memory but inste...