ALEXANDRIA, Va., April 21 -- United States Patent no. 12,608,654, issued on April 21, was assigned to QUALCOMM Inc. (San Diego).

"Memory device high-speed interface training" was invented by Farrukh Aquil (San Diego), Boris Dimitrov Andreev (San Diego) and Vinodh Mukundarajan (San Diego).

According to the abstract* released by the U.S. Patent & Trademark Office: "Various aspects of the present disclosure generally relate to memory device high-speed interface training. In some aspects, a memory device may perform an initial training operation for a high-speed interface of the memory device. The memory device may detect, after a completion of the initial training operation for the high-speed interface, whether an aging counter associated wi...