US Patent Issued to QUALCOMM Incorproated on Nov. 3 for "Vertical channel field effect transistor (VCFET) with reduced contact resistance and/or parasitic capacitance, and related fabrication methods" (California Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,388, issued on Nov. 3, was assigned to QUALCOMM Incorproated (San Diego).

"Vertical channel field effect transistor (VCFET) with reduced contact resistance and/or parasitic capacitance, and related fabrication methods" was invented by Junjing Bao (San Diego), Xia Li (San Diego) and Giridhar Nallapati (San Diego).

According to the abstract* released by the U.S. Patent & Trademark Office: "Vertical channel field-effect transistors (VCFETs) with reduced contact resistance and/or parasitic capacitance, and related fabrication methods. In exemplary aspects, to reduce contact resistance of the VCFET, an end portion of the vertical channel has a semiconductor structure that has an expand...