US Patent Issued to QUALCOMM Incorproated on Aug. 25 for "Die interconnect structure with embedded inductor(s) including coupled coils formed in redistribution layer (RDL) and adjacent bump-level distribution layer (BDL) for improved Q factor" (California Inventors)

ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,721,157, issued on Aug. 25, was assigned to QUALCOMM Incorproated (San Diego).

"Die interconnect structure with embedded inductor(s) including coupled coils formed in redistribution layer (RDL) and adjacent bump-level distribution layer (BDL) for improved Q factor" was invented by John Jianhong Zhu (San Diego), Junjing Bao (San Diego), Abhishek Jain (San Diego) and Giridhar Nallapati (San Diego).

According to the abstract* released by the U.S. Patent & Trademark Office: "Aspects disclosed herein include a die interconnect structure with embedded inductor(s) including coupled coils formed in redistribution layer (RDL) and adjacent bump-level distribution layer (BDL) for improved Q fac...