US Patent Issued to Qorvo US on June 30 for "High electron mobility transistor device having an aluminum-doped buffer layer" (Texas Inventors)

ALEXANDRIA, Va., July 16 -- United States Patent no. 12,672,301, issued on June 30, was assigned to Qorvo US Inc. (Greensboro, N.C.).

"High electron mobility transistor device having an aluminum-doped buffer layer" was invented by Jose Jimenez (Dallas), Jinqiao Xie (Allen, Texas) and Vipan Kumar (Plano, Texas).

According to the abstract* released by the U.S. Patent & Trademark Office: "A high electron mobility transistor (HEMT) device is disclosed. The HEMT device includes a substrate with epitaxial layers over the substrate that includes a buffer layer having a dopant comprising aluminum, wherein the concentration of aluminum within the buffer layer is between 0.5% and 3%. The epitaxial layer further includes a channel layer over the buf...