US Patent Issued to Qorvo US on Aug. 25 for "Field effect transistor (FET) transconductance device with varying gate lengths" (California Inventor)

ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,719,426, issued on Aug. 25, was assigned to Qorvo US Inc. (Greensboro, N.C.).

"Field effect transistor (FET) transconductance device with varying gate lengths" was invented by Kevin Wesley Kobayashi (Redondo Beach, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A field effect transistor (FET) transconductance device with varying gate lengths is disclosed. In one aspect, the varying effective gate lengths are used in a differential architecture to obtain linear even and odd order operation simultaneously. In a particular aspect, the effective gate lengths may be varied according to a differential Multi-Tanh-like architecture. This variation of eff...