ALEXANDRIA, Va., June 4 -- United States Patent no. 12,322,713, issued on June 3, was assigned to PSEMI Corp. (San Diego).
"Transient stabilized SOI FETs" was invented by Robert Mark Englekirk (Littleton, Colo.), Keith Bargroff (San Diego), Christopher C. Murphy (Lake Zurich, Ill.), Tero Tapio Ranta (San Diego) and Simon Edward Willard (Irvine, Calif.).
According to the abstract* released by the U.S. Patent & Trademark Office: "Integrated circuits (ICs) that avoid or mitigate creation of changes in accumulated charge in a silicon-on-insulator (SOI) substrate, particularly an SOI substrate having a trap rich layer. In one embodiment, a FET is configured such that, in a standby mode, the FET is turned OFF while maintaining essentially the s...