ALEXANDRIA, Va., Feb. 3 -- United States Patent no. 12,542,549, issued on Feb. 3, was assigned to pSemi Corp..
"Gate resistor bypass for RF FET switch stack" was invented by Ravindranath D. Shrivastava (San Diego), Fleming Lam (San Diego) and Payman Shanjani (San Diego).
According to the abstract* released by the U.S. Patent & Trademark Office: "A common gate resistor bypass arrangement for a stacked arrangement of FET switches, the arrangement including a series combination of an nMOS transistor and a pMOS transistor connected across a common gate resistor. During at least a transition portion of the transition state of the stacked arrangement of FET switches, the nMOS transistor and the pMOS transistor are both in an ON state and bypass...