US Patent Issued to PROTERIAL on Sept. 1 for "Silicon carbide substrate having excellent flatness and low basal plane dislocation density" (Japanese Inventors)

ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,219, issued on Sept. 1, was assigned to PROTERIAL LTD. (Tokyo).

"Silicon carbide substrate having excellent flatness and low basal plane dislocation density" was invented by Sadahiko Kondo (Tokyo) and Junya Ikeda (Tokyo).

According to the abstract* released by the U.S. Patent & Trademark Office: "A new substrate manufacturing method of obtaining a SiC epitaxial substrate having excellent flatness and a SiC epitaxial substrate having excellent flatness are provided. In a Sic epitaxial substrate having an epitaxial film obtained by epitaxially growing silicon carbide on a front surface of a silicon carbide substrate, the SiC epitaxial substrate has a first main surface made of the ...