ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,707,695, issued on Aug. 11, was assigned to Powerchip Semiconductor Manufacturing Corp. (Hsinchu, Taiwan).
"Semiconductor device and method for forming the same" was invented by Meng-Han Lin (Hsinchu City, Taiwan) and Yu-Chang Lin (Hsinchu, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure provides a semiconductor device and a method for forming the same. The semiconductor device includes a substrate including an isolation structure defining an active region, a gate structure disposed on the active region of the substrate, a source and a drain respectively disposed in the substrate at opposite sides of the gate structure in a ...