US Patent Issued to Powerchip Semiconductor Manufacturing on April 21 for "Method of manufacturing semiconductor device" (Taiwanese Inventor)

ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,607, issued on April 21, was assigned to Powerchip Semiconductor Manufacturing Corp. (Hsinchu, Taiwan).

"Method of manufacturing semiconductor device" was invented by Hiroshi Yoshida (Hsinchu City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of manufacturing a semiconductor device includes forming a gate oxide layer on a substrate, where the substrate includes a high voltage region and a low voltage region. The gate oxide layer is disposed in the high voltage region. Wet etching is performed on the gate oxide layer to reduce a thickness of the gate oxide layer. Multiple trenches are formed around the high voltage region in the su...