US Patent Issued to POSTECH RESEARCH AND BUSINESS DEVELOPMENT FOUNDATION on Sept. 9 for "Ultrathin film shadow mask for lithography and lithography method using the same" (South Korean Inventors)

ALEXANDRIA, Va., Sept. 10 -- United States Patent no. 12,411,410, issued on Sept. 9, was assigned to POSTECH RESEARCH AND BUSINESS DEVELOPMENT FOUNDATION (Pohang-si, South Korea).

"Ultrathin film shadow mask for lithography and lithography method using the same" was invented by Seok Kim (Pohang-si, South Korea) and Sangyeop Lee (Pohang-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "Provided are a new ultrathin film silicon shadow mask which is flexible, is reusable, and can be precisely aligned and manipulated through transfer printing, and a lithography method using the same. A thin thickness of a silicon shadow mask may intrinsically form a pattern having an enhanced resolution in a plane a...