US Patent Issued to POSTECH RESEARCH AND BUSINESS DEVELOPMENT FOUNDATION on Dec. 2 for "Thin film transistor using three-dimensional tin-based perovskite as a semiconductor layer and preparation method thereof" (South Korean Inventors)

ALEXANDRIA, Va., Dec. 2 -- United States Patent no. 12,490,459, issued on Dec. 2, was assigned to POSTECH RESEARCH AND BUSINESS DEVELOPMENT FOUNDATION (Pohang-si, South Korea).

"Thin film transistor using three-dimensional tin-based perovskite as a semiconductor layer and preparation method thereof" was invented by Yong Young Noh (Daejeon, South Korea), Ao Liu (Pohang-si, South Korea) and Huihui Zhu (Pohang-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "Disclosed is a thin-film transistor including a substrate including a gate electrode formed thereon, a gate insulating film disposed on an entire face of the substrate, a semiconductor layer disposed on an entire face of the gate insulating fi...