ALEXANDRIA, Va., Aug. 26 -- United States Patent no. 12,402,439, issued on Aug. 26, was assigned to Plessey Semiconductors Ltd (Plymouth, Great Britain).
"Strain relaxation layer" was invented by Andrea Pinos (Plymouth, Great Britain), WeiSin Tan (Plymouth, Great Britain), Samir Mezouari (Plymouth, Great Britain), John Lyle Whiteman (Plymouth, Great Britain), Xiang Yu (Plymouth, Great Britain) and Jun-Youn Kim (Plymouth, Great Britain).
According to the abstract* released by the U.S. Patent & Trademark Office: "A method of forming a strain relaxation layer in an epitaxial crystalline structure, the method comprising: providing a crystalline template layer comprising a material with a first natural relaxed in-plane lattice parameter; formi...