US Patent Issued to PlayNitride Display on July 21 for "Micro semiconductor device and micro semiconductor structure" (Taiwanese Inventors)

ALEXANDRIA, Va., July 21 -- United States Patent no. 12,690,305, issued on July 21, was assigned to PlayNitride Display Co. Ltd. (MiaoLi County, Taiwan).

"Micro semiconductor device and micro semiconductor structure" was invented by Yu-Hsuan Hsiao (MiaoLi County, Taiwan), Teng-Hsien Lai (MiaoLi County, Taiwan) and Tzu-Yang Lin (MiaoLi County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A micro semiconductor device includes an epitaxial structure and an optical layer. The optical layer is disposed on the epitaxial structure. The optical layer is a multi-layer film structure including a first film layer, a second film layer, and a third film layer disposed between the first film layer and the second ...