US Patent Issued to PlayNitride Display on July 21 for "Epitaxial structure and method for forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., July 21 -- United States Patent no. 12,690,294, issued on July 21, was assigned to PlayNitride Display Co. Ltd. (MiaoLi County, Taiwan).

"Epitaxial structure and method for forming the same" was invented by Hsin-Chiao Fang (MiaoLi County, Taiwan), Shen-Jie Wang (MiaoLi County, Taiwan) and Yen-Lin Lai (MiaoLi County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "An epitaxial structure including a first epitaxial layer, a second epitaxial layer, and an interface treatment layer is provided. The first epitaxial layer is an ohmic contact layer. The second epitaxial layer is disposed on the first epitaxial layer and is a phosphide compound layer, where a material of the second epitaxial l...