US Patent Issued to PILEGROWTH TECH on March 17 for "Method for producing a freestanding and stress-free epitaxial layer starting from a disposable substrate patterened in etched pillar array" (Italian Inventor)

ALEXANDRIA, Va., March 17 -- United States Patent no. 12,581,872, issued on March 17, was assigned to PILEGROWTH TECH S.R.L. (Baranzate, Italy).

"Method for producing a freestanding and stress-free epitaxial layer starting from a disposable substrate patterened in etched pillar array" was invented by Leonida Miglio (Domaso, Italy).

According to the abstract* released by the U.S. Patent & Trademark Office: "The method provides for the growth of an epitaxial layer (200) made of a first semiconductor material on a substrate (100) made of a second semiconductor material; the materials are different and have different CTEs; the method comprises the steps of: A) patterning the substrate (100) by an etching process so to form an array of pillars...