US Patent Issued to PHISON ELECTRONICS on May 19 for "Memory management method, memory storage device and memory control circuit unit" (Taiwanese Inventor)

ALEXANDRIA, Va., May 19 -- United States Patent no. 12,632,182, issued on May 19, was assigned to PHISON ELECTRONICS CORP. (Miaoli, Taiwan).

"Memory management method, memory storage device and memory control circuit unit" was invented by Horng-Sheng Yan (Penghu County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory management method, a memory storage device, and a memory control circuit unit are disclosed. The memory management method includes: writing first data into N super physical programming units of a first super physical erasing unit in a plurality of super physical erasing units; generating N first temporary parity codes according to the first data and storing the N first temporary p...