US Patent Issued to PHISON ELECTRONICS on July 21 for "Memory control method, memory storage device, and memory control circuit unit" (Taiwanese Inventors)

ALEXANDRIA, Va., July 21 -- United States Patent no. 12,687,987, issued on July 21, was assigned to PHISON ELECTRONICS CORP. (Miaoli, Taiwan).

"Memory control method, memory storage device, and memory control circuit unit" was invented by Xing Yu Chen (Hsinchu County, Taiwan) and Ting Wei Chen (Hsinchu City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory control method, a memory storage device, and a memory control circuit unit for a rewritable non-volatile memory module are provided. The method includes: judging a load level of the rewritable non-volatile memory module; determining a suspend interval between a plurality of suspend commands according to the load level; and sequentially issuin...