US Patent Issued to Peking University on March 3 for "Method for preparing gallium nitride (GaN) single-crystal substrate with edge metal mask technology" (Chinese Inventors)

ALEXANDRIA, Va., March 3 -- United States Patent no. 12,565,713, issued on March 3, was assigned to Peking University (Beijing).

"Method for preparing gallium nitride (GaN) single-crystal substrate with edge metal mask technology" was invented by Xinqiang Wang (Beijing), Fang Liu (Beijing), Qiang Liu (Beijing), Yucheng Guo (Beijing), Tao Wang (Beijing), Jiejun Wu (Beijing), Bo Shen (Beijing) and Guoyi Zhang (Beijing).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure provides a method for preparing a gallium nitride (GaN) single-crystal substrate with an edge metal mask technology. The method includes: preparing a metal mask ring on a composite epitaxial substrate, epitaxially growing a GaN...