ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,716,146, issued on Aug. 25, was assigned to Peking University (Beijing) and Sinopatt Technology Co. Ltd. (Dongguan, China).

"Patterned aluminum nitride composite substrate and preparation method thereof" was invented by Xinqiang Wang (Beijing), Fang Liu (Beijing), Kai Kang (Beijing), Guoyi Zhang (Beijing), Tongjun Yu (Beijing), Ping Wang (Beijing) and Zirong Wang (Beijing).

According to the abstract* released by the U.S. Patent & Trademark Office: "A patterned aluminum nitride (AlN) composite substrate and a preparation method thereof are provided. A single crystal AlN with a semi-suspended AlN structure is prepared on a high temperature-resistant substrate. A non-suspended AlN of th...